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IRG4BC20MDPBF insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.85v @v ge = 15v, i c = 11a parameter min. typ. max. units r jc junction-to-case - igbt ------ ------ 2.1 r jc junction-to-case - diode ------ ------ 2.5 c/w r cs case-to-sink, flat, greased surface ------ 0.50 ------ r ja junction-to-ambient, typical socket mount ----- ----- 80 wt weight ------ 2 (0.07) ------ g (oz) thermal resistance 3/6/01 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 18 i c @ t c = 100c continuous collector current 11 i cm pulsed collector current 36 a i lm clamped inductive load current 36 i f @ t c = 100c diode continuous forward current 7.0 t sc short circuit withstand time 10 s i fm diode maximum forward current 36 a v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 60 p d @ t c = 100c maximum power dissipation 24 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) ? rugged: 10sec short circuit capable at v gs =15v ? low v ce(on) for 4 to 10khz applications ? igbt co-packaged with ultra-soft-recovery antiparallel diode ? industry standard to-220ab package ? lead-free benefits ? offers highest efficiency and short circuit capability for intermediate applications ? provides best efficiency for the mid range frequency (4 to 10khz) ? optimized for appliance motor drives, industrial (short circuit proof) drives and intermediate frequency range drives ? high noise immune "positive only" gate drive- negative bias gate drive not necessary ? for low emi designs- requires little or no snubbing ? single package switch for bridge circuit applications ? compatible with high voltage gate driver ic's ? allows simpler gate drive t o -22 0 ab www.irf.com 1 short circuit rated fast igbt

2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ---- ---- v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ---- 0.67 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 1.85 2.1 i c = 11a v ge = 15v ---- 2.46 ---- v i c = 18a see fig. 2, 5 ---- 2.07 ---- i c = 11a, t j = 150c v ge(th) gate threshold voltage 4.0 ---- 6.5 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ---- -11 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance 3.0 3.6 ---- s v ce = 100v, i c = 11a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.4 1.7 v i c = 8.0a see fig. 13 ---- 1.3 1.6 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v

parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 39 59 i c = 11a qge gate - emitter charge (turn-on) ---- 5.3 8.0 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 20 30 v ge = 15v t d(on) turn-on delay time ---- 21 ---- t j = 25c t r rise time ---- 37 ---- ns i c = 11a, v cc = 480v t d(off) turn-off delay time ---- 463 690 v ge = 15v, r g = 50 ? t f fall time ---- 340 510 energy losses include "tail" and e on turn-on switching loss ---- 0.41 ---- diode reverse recovery. e off turn-off switching loss ---- 2.03 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 2.44 3.7 t d(on) turn-on delay time ---- 19 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 41 ---- ns i c = 6.5a, v cc = 480v t d(off) turn-off delay time ---- 590 ---- v ge = 15v, r g = 50 ? t f fall time ---- 600 ---- energy losses include "tail" and e ts total switching loss ---- 3.49 ---- mj diode reverse recovery. l e internal emitter inductance ---- 7.5 ---- nh measured 5mm from package c ies input capacitance ---- 460 ---- v ge = 0v c oes output capacitance ---- 54 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 14 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 37 55 ns t j = 25c see fig. ---- 55 90 t j = 125c 14 i f = 8.0a i rr diode peak reverse recovery current ---- 3.5 5.0 a t j = 25c see fig. ---- 4.5 8.0 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 65 138 nc t j = 25c see fig. ---- 124 360 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ---- 240 ---- a/s t j = 25c see fig. during t b ---- 210 ---- t j = 125c 17

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0.1 1 10 100 6 8 10 12 14 16 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 60% of rated voltage ideal diodes 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 125c tsink = 90c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 13w 0.1 1.0 10.0 v ce , collector-to-emitter voltage (v) 0.1 1 10 100 i c , c o l l e c t o r - t o e m i t t e r c u r r e n t ( a ) v ge = 15v 20s pulse width t j = 25c t j = 150c

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! !"#$ "% 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 t j , junction temperature (c) 1.0 2.0 3.0 4.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 22a v ge = 15v 80s pulse width i c = 11a i c = 5.5a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

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1 10 100 0 200 400 600 800 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 11a cc c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 100 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 50 ? v ge = 15v v cc = 480v i c = 22a i c = 11a i c = 5.5a 0 10 20 30 40 50 r g , gate resistance ( ? ) 2.3 2.4 2.5 t o t a l s w i t c h i n g l o s s e s ( m j ) v cc = 480v v ge = 15v t j = 25c i c = 11a

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&) !' *"' 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 c , c a p a c i t a n c e ( p f ) v ge = 20v t j = 125 safe operating area 5 10 15 20 25 i c , collector current (a) 0.0 2.0 4.0 6.0 8.0 10.0 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 50 ? tj = 150c v ge = 15v v cc = 480v

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(( + ( + & + + + 0 100 200 300 400 500 100 1000 f di /dt - (a/s) rr q - (nc) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 0 20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j

8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = !"#$! % $ $ vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce & $%
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www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v !#"(
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10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 50 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- g ate 2- dr ain 3- source 4- dr ain lead assignm ents igbts, copack 1- g ate 2- co lle cto r 3- em itter 4- co lle cto r

example: in the assembly line "c" t his is an ir f1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e m b l y lot code date code year 7 = 1997 line c week 19 logo r e c t if ie r in t e r n at io n al note: "p " in ass em bly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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